Liquid electrical interconnect and devices using same

ABSTRACT

Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.

FIELD OF THE INVENTION

This invention pertains to liquid interconnect systems, and methods offorming conductive liquid interconnections between electrical nodes.

BACKGROUND OF THE INVENTION

In semiconductor manufacture, packaging is the final operation thattransforms a semiconductor substrate into a functional semiconductorcomponent. Typically, the semiconductor substrate is in the form of asemiconductor die. Packaging provides protection for the semiconductorsubstrate, a signal transmission system for the integrated circuits onthe semiconductor substrate, and external connection points for thecomponent. In response to the demand for smaller, lighter and thinnerconsumer products, new semiconductor components and new packagingmethods are being developed.

In fabricating a semiconductor component, it is sometimes necessary toprovide interconnects which allow transmission of signals from a circuitside of a semiconductor substrate to the backside of the semiconductorsubstrate. Interconnects or through wafer interconnects which extendthrough the semiconductor substrate from the circuit side to thebackside are sometimes referred to as through interconnects. Typically,through interconnects comprise metal filled vias formed in thesemiconductor substrate, which are configured to electrically connectthe integrated circuits on the circuit side to elements on the backsideof the semiconductor substrate.

In the manufacture of a semiconductor component, the semiconductorsubstrate may be mounted and bonded to a second substrate. Typically,when the two substrates are bonded, they are securely bonded and nomovement of the substrates relative to one another is permitted.Further, with a fixed electrical connection between the substrates, suchas a solder connection, the electrical connection can fatigue degradingthe connection between the substrates. Further, a fixed electricalconnection can not accommodate large differences in the coefficients ofthermal expansion (CTE) between the substrates.

A through interconnect that can overcome one or more of these issues anda method of providing the same are desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a semiconductor component in accordance with anembodiment of the invention.

FIG. 2A is a cross sectional view of the semiconductor component of FIG.1 along the line 2-2′ at a stage of processing.

FIG. 2B is a cross sectional view of the semiconductor component of FIG.1 along the line 2-2′ at another stage of processing.

FIG. 3 is a flowchart showing a method of fabricating the semiconductorcomponent of FIG. 1.

FIG. 4 depicts a plurality of semiconductor components at a stage ofprocessing.

FIGS. 5A-5C depict imager devices including the semiconductor componentof FIG. 1.

FIG. 6 is a block diagram of a processor system including any one of theimager devices of FIGS. 5A-5C.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which are shownby way of illustration specific embodiments that may be practiced. Itshould be understood that like reference numbers represent like elementsthroughout the drawings. These example embodiments are described insufficient detail to enable those skilled in the art to practice them.It is to be understood that other embodiments may be utilized, and thatstructural, material, and electrical changes may be made, only some ofwhich are discussed in detail below.

Referring to FIG. 1, a semiconductor structure 100 is illustrated. Thesemiconductor structure 100 includes a first substrate 13 (FIGS. 2A-2B);and second substrate 12 (FIGS. 2A-2B). The first substrate 13 is, forexample, a semiconductor substrate. The second substrate 12 can be, forexample, an interposer or mounting substrate or another semiconductorsubstrate. In the semiconductor structure 100, both the first substrate13 and the second substrate 12 can comprise silicon, or anothersemiconductor material such as germanium or gallium arsenide. The secondsubstrate can also comprise a semiconductor material or other suitablematerials such as glasses or polymers.

The first substrate 13 includes integrated circuits. In the illustratedexample, the first substrate 13 comprises an imager die 110, having animager device 400, including a pixel array 118.

The first substrate also includes a plurality of substrate contacts 20in electrical communication with the integrated circuits. The substratecontacts 20 can comprise device bond pads, or alternately redistributioncontacts (i.e., contacts formed in conjunction with an electricalredistribution layer (RDL)). In addition, the substrate contacts 20 cancomprise a highly-conductive material, such as aluminum or copper. Thesubstrate contacts 20 can also comprise stacks of different materials,such as aluminum-nickel-gold, aluminum-nickel-solder, copper-palladium,and aluminum on copper.

For simplicity, the first substrate 13 is illustrated with only eightsubstrate contacts 20 arranged in an edge array along the oppositeperipheral edges of the first substrate 13. However, in actual practicethe first substrate 13 can include more or fewer substrate contacts 20arranged in a desired configuration, such as a center array, an edgearray or an area array. Also, as shown in FIG. 1, the substrate contacts20 have a generally square peripheral outline. However, the substratecontacts 20 can be formed in a pattern having any shape includingsquare, rectangular, circular, triangular and oval. In addition, a sizeof the substrate contacts 20 can be selected as required. Further, eachsubstrate contact 20 can comprise a generally planar pad as shown, orcan have other shapes such as a projection, a bump or a volcano shape.

Referring to FIGS. 2A-2B, which shows the substrates 13 and 12 separatedand then connected as well as the connection between substrates 13 and12, for one semiconductor structure 100 the first substrate 13 has acircuit side or first side 41, and a back side or second side 42. Thesubstrate contacts 20 can be in electrical communication with internalconductors (not shown) located within the first substrate 13. Inaddition, the internal conductors can be in electrical communicationwith the circuitry fabricated on the first substrate 13. Further, thefirst substrate 13 includes an electrical insulation layer 30 on thecircuit side 41. The insulation layer 30 isolates the contacts 20 fromone another and can comprise an electrically insulating material, suchas BPSG (borophosphosilicate glass), a polymer (e.g., polyimide,polydimethylsiloxane (PDMS)) or an oxide (SiO₂).

For some applications, at least some of the substrate contacts 20 cancomprise special purpose contacts. For example, the substrate contacts20 can comprise electrically isolated contacts that are not inelectrical communication with the integrated circuits on the firstsubstrate 13.

As shown in FIGS. 2A-2B, the semiconductor structure 100 also includes aplurality of through interconnects 29, each of which connects with arespective contact 20 on substrate 13 with a contact 22 on substrate 12placing the contacts 20, 22 in electrical communication with the throughinterconnects 29. Each through interconnect 29 includes a sidewallinsulated substrate opening 36, such as a via, in the first substrate 13aligned with an associated substrate contact 20.

The openings 36 are partially filled with a liquid conductive material10. The amount of liquid conductive material 10 should be sufficient toprovide an electrical connection between contact 20 and contact 22(described below), but should not significantly overflow from opening 36when the first and second substrates 13, 12 are connected (as describedin more detail below). In the example illustrated in FIGS. 2A-2B, theliquid conductive material 10 has a viscosity such that it remainswithin opening 36 independent of the orientation of the second substrate13.

The liquid conductive material 10 can be any non-solid, non-hardeningconductive material, for example, a high viscosity putty, caulk, pasteor a low viscosity liquid. In the illustrated example, the liquidconductive material 10 is a non-hardening material, meaning that theliquid conductive material 10 will remain a liquid under the standardprocessing and operational conditions of the structure 100. The liquidconductive material 10 should be a material that does not evaporate overits lifetime, such as a material with a low vapor pressure, e.g., lessthan 1 mmHg at 20° C. Other characteristics for the liquid conductivematerial 10, such as viscosity, melting, freezing and boiling points canbe chosen based on the particular application of the structure 100.

Examples of materials suitable for the liquid conductive material 10include a non-hardening epoxy or similar material that includes aconductive filler, such as nano scale particles, such that the epoxy isconductive in a liquid state.

In one example, the liquid conductive material 10 is an uncured epoxythat is substantially conductive in the low-viscosity, uncured form. Inone example, the conductive epoxy has sufficient conductivity that a 15mil length sample of the liquid conductive epoxy having cross-sectionaldimensions of 50 mil by 2 mil would have a resistance of less than about1000 ohms along its length while having a viscosity of less than about1,000,000 cps.

A suitable epoxy is a silver-containing epoxy sold under the productname 116-37A by Creative Materials, Inc. of Tyngsboro, Mass. If desired,the silver containing epoxy can be mixed with one or more other liquids.In one example the silver-containing epoxy is mixed with a secondliquid, which comprises an ionic salt. Preferably, the ionic salt issoluble in at least one of the first and second liquids. The ionic saltcan comprise organic salts and/or inorganic salts. The ionic salt cancomprise, for example, a lithium salt, such as a lithium imide salt.Suitable lithium salts are, for example, LiAsF₆ and LiN(CF₃ SO₂)₂.

The mixing of the second liquid with the epoxy can occur prior to, orafter, placement of the epoxy into opening 36. In one example, the finalconcentration of ionic salt within the epoxy mixture is from about 0.4%(by weight) to about 2% (by weight).

Suitable liquids for mixing with the silver-containing epoxy include athinner, which lowers the viscosity of the epoxy. The thinner can be,for example, aliphatic glycidyl ethers and aromatic glycidyl ethers,such as Heloxy 61 and Heloxy 7 by Shell Chemical Company of Houston,Tex.

The liquid conductive material 10 can also be an electrolyte. Forexample, polypropylene glycol mixed with lithium based salts, such asthose used in lithium and lithium ion batteries. Other examples ofelectrolyte materials suitable for the liquid conductive material 10include polymer electrolytes that use polyethylene oxide (PEO) withsalts. The melting point of PEO is 38° C., which can be lowered by thesalts or other additives. Further, the viscosity of PEO can be modifiedby including propylene glycol, if desired.

In another example, an electrolyte can be used in the epoxy describedabove to provide conductivity in place of the silver or to enhanceconductivity in conjunction with the silver.

Each through interconnect 29 also includes a projection 38 on a frontside 50 of the second substrate 12 supporting a contact 22. Theprojection 38 and associated contact 22 is in mating physical engagementwith an associated substrate opening 36. The projections 38 can bevertical pins, such as wirebonded stud bumps, or any other projection.The substrate openings 36 in the first substrate 13 for the throughinterconnects 29, and the projections 38 on the second substrate 12 forthe through interconnects 29, can be formed with mating sizes and shapesusing anisotropic etching processes.

Each projection 38 includes a contact 22 configured for physical andelectrical contact with the liquid conductive material 10, which, inturn is in contact with an associated substrate 13 contact 20. Thecontacts 22 can comprise pads or bumps formed on the top surfaces of theprojections 38, or alternately can comprise the upper planar surfaces ofthe conductive connection 23 (described below). In addition, thecontacts 22 can comprise metal, solder, or a conductive polymer thatprovides an electrical connection with the liquid interconnect material10.

As shown in FIGS. 2A-2B, there are conductive connections 23 fromcontact 22 of projection 38 to additional circuitry 54 provided on thesecond substrate 12. Each projection 38 can have one or more conductiveconnections 23. The conductive connection 23 can comprise anelectrically conductive metal, or a conductive polymer, deposited in anelectrically insulated via of a selected diameter, or any otherconductive structures or interconnects.

The first substrate 13 can also include an electrical insulation layer31 on the back side 42 thereof extending into the substrate openings 36of the through interconnects 29, but not to cover access to contacts 20.The electrical insulation layer 31 can comprise a single layer ofmaterial or the substrate openings 36 can include one or more differentinsulation layers from that provided on the second side 42 of thesubstrate 13. In addition, the second substrate 12 includes anelectrical insulation layer 32 on a front side 50 thereof, which do notcover contacts 22 or 54, and an electrical insulation layer 33 on abackside 52 thereof. As with the insulation layer 30, the electricalinsulation layers 31, 32 and 33 can comprise an electrically insulatingmaterial, such as a glass (e.g., borophosphosilicate glass), a polymer(e.g., polyimide, polydimethylsiloxane (PDMS)), or an oxide (e.g., SiO₂)and can serve to isolate electrical circuitry 54. For some applications,one or more of the electrical insulation layers 30, 31, 32 and 33 can beomitted.

While use of the liquid conductive material 10 as an interconnect isdescribed in connection with a through interconnect 29, the liquidconductive material 10 can be used with other interconnects and toprovide other electrical connections between structures or devices. Useof the liquid conductive material 10 is particularly suitable toaccommodate large differences in the coefficients of thermal expansion(CTE) between structures connected by the liquid conductive material 10or where it is desirable to maintain movement between the structuresconnected by the liquid conductive material 10, e.g., between substrates13 and 12, such as to buffer one or the other of the structures fromvibration or to enable adjustments in the alignment between thestructures.

If desired, additional substrates, such as a third substrate 414 (FIG.5C) can be included. Such multi-substrate semiconductor structures 100can be used in the fabrication of imager modules in which case the thirdsubstrate 414 can be transparent or partially transparent substrate andinclude one or more lenses 16 (FIG. 5C). A transparent substrate cancomprise glass, silicon or a composite material (silicon on glass). Inaddition, for uses in imager modules, the first substrate 13 cancomprise a full thickness semiconductor substrate or a thinnedsemiconductor substrate.

If the semiconductor structure 100 is used for an imager apparatus 440(FIGS. 5A-5C), the first substrate 13 (FIGS. 2A-2B) can comprises animager die 110 (FIG. 1), having an imager device 400, including a pixelarray 118. The second substrate 12 can comprise a passive element havingno active semiconductor devices. In an alternate example, the secondsubstrate 12 can include active semiconductor devices. The semiconductorstructure 100 may also be designed for other applications besides animager apparatus. Thus, the first substrate 13 can comprise another typeof semiconductor die having integrated circuits constructed in a desiredelectrical configuration using active semiconductor devices. Forexample, the first substrate 13 can comprise a high speed digital logicdevice, such as a dynamic random access memory (DRAM), a static randomaccess memory (SRAM), a flash memory, a microprocessor, a digital signalprocessor (DSP), an application specific integrated circuit (ASIC), aMEMS type device (e.g., accelerometer, microphone, speaker, electromechanical device), a solar cell or any other electrical component orsystem.

Referring to FIG. 3, a method of forming a semiconductor structure 100is described. While the steps 301-306 shown in FIG. 3 are shown in anexemplary order, it should be understood that the order of the steps301-306 can be changed and additional steps not described can beconducted before, during and after the steps 301-306 shown in FIG. 3.

In step 301, the first and second substrates 13, 12 are fabricated andprovided for assembly. The first and second substrates 13, 12 and thedevices and electrical structures thereon, can be formed by knownmethods. As shown in step 302, the openings 36 formed in substrate 13are partially filled with the liquid conductive material 10. If anadditional substrate is to be included in semiconductor structure 100,such a substrate would also be fabricated and provided in step 301.

Following fabrication of the first substrate 13 and second substrate 12,an aligning step 303 is performed. As shown in FIG. 2A, during thealigning step 303 the first and second substrates 13, 12 are aligned,such that the projections 38 on the second substrate 12 are aligned withthe liquid conductive material 10 filled openings 36 on the firstsubstrate 13.

In connection step 304 (FIG. 2B), the first and second substrates 13, 12are moved together such that the contacts 22 on the projections 38 areplaced in physical contact with the liquid conductive material 10.

If an additional substrate is to be included in semiconductor structure100, such a substrate could be aligned and connected according to knownmethods either before or after the aligning and connecting steps 303,304.

If desired, a plurality of first substrates 13 can be aligned with acommon second substrate 12 and the second substrate 12 is cut around thefirst substrates 13 in a singulation step 305. The singulating step 305can be performed using a dicing saw or other singulation method, such ascutting with a laser or a water jet, or by etching with a suitable wetor dry etchant. FIG. 4 depicts in top view a plurality of semiconductorcomponents 100 in which a plurality of first substrates 13 are connectedwith a common second substrate 12, prior to a singulation step 305. Asshown in FIG. 4, the semiconductor structure 100 when singulated aroundsubstrate 13 can have a generally rectangular chip scale outline.Alternately, the semiconductor structure 100 and the first substrate 13can have any shape, such as square or triangular, and can also have acircular or oval shape.

Although FIG. 4 shows a plurality of separate first substrates 13connected to a common substrate 12, it should be understood that theplurality of first substrates 13 can also be part of a common substratethat is connected with second substrate 12. Substrates 13 and 12 can beformed on respective semiconductor wafers. In this case, semiconductorstructures 100 are formed by singulation through both substrates 13, 12.

Optionally, an adjusting step 306 can be performed to move one or bothof the first and second substrates 13, 12 with respect to one another orwith respect to another structure, such as lens structure 16 (describedbelow). As the first and second substrates 13, 12 are not fixedly bondedand are connected by the liquid conductive material 10, the first andsecond substrates are moveable to some extent with respect to oneanother as depicted by arrows 202 in FIG. 2B before and after thesingulation step 305. According, the adjusting step 306 can be conductedat any time, including during operation of an electronic device orsystem including the semiconductor structure 100, e.g., an imager device400 (FIGS. 5A-5C). Movement of the first and second substrates 13, 12can be accomplished by a device 505 as described below in connectionwith FIGS. 5A-5C.

In one example, where the semiconductor structure 100 includes an imagerdevice 400 having a pixel array 118 on substrate 13, this movement canbe used to focus an image on a pixel of the imager device 400 byenabling movement of the first and/or second substrates 13, 12 towardand away from one another. Thus, the adjusting step 306 can also be afocusing step. Such movement can also accommodate extreme differences inthe coefficients of thermal expansion (CTE) between the first and secondsubstrates 13, 12. Further, the liquid conductive material 10 allows onesubstrate 13, 12 to float with respect to the other substrate 13, 12,buffering it from vibration.

FIGS. 5A-5C depict imager apparatuses 440 constructed using thesemiconductor structure 100 where an imager device 400 (FIG. 1) isformed on substrate 13. In the FIG. 5A example, a lens structure 16,which may include one or more lenses for focusing an image on pixelarray 118, is located adjacent the first substrate 13. A spacer 416 maybe provided between lens structure 16 and substrate 13. Alternatively,the lens structure 16 could be located adjacent the second substrate 12,as shown in FIG. 5B for backside imaging of the pixel array 118. Aspacer 416 may be provided lens structure 16 and substrate 12. Asanother alternative shown in FIG. 5C, the semiconductor structure 100can also include a third substrate 414 having lens structure 16, whichis directly coupled to substrate 12.

During the adjusting step 306 (FIG. 3), one of the first and secondsubstrates 13, 12 is moved with respect to the other and with respect tolens structure 16 as shown by arrows 202. If desired, one substrate 13,12 can be maintained in a fixed alignment with lens structure 16, e.g.,by spacer 416. In such a case, only one substrate 13, 12 is moved, forexample, the substrate 13, 12 that is not in a fixed alignment with lensstructure 16. Moving one or more of the first and second substrates 13,12 can require less power than moving the more massive lens structure16.

The movement can be made by a device 505 that is located internally(FIG. 5A) or externally (FIG. 5B) to the apparatus 440. As anotheralternative shown in FIG. 5C, the device 505 can be located on the firstor second substrates 13, 12. In the FIG. 5C example, the device 505 islocated on the first substrate 13, which includes the imager device 400(FIG. 1). The device 505 can also be included on the second substrate12. Where the device 505 is located on the first or second substrate 13,12, the device 505 can be a micro-electromechanical system (MEMS)device.

FIG. 6 illustrates a processor system as part of a digital still orvideo camera system 500 employing an imager apparatus 440 as illustratedin any of FIGS. 5A-5C, which include a semiconductor structure 100. Theprocessing system includes a processor 555 (shown as a CPU) whichimplements system, e.g. camera 500, functions. The processor 555 iscoupled with other elements of the system, including random accessmemory 520, removable memory 525 such as a flash or disc memory, one ormore input/output devices 510 for entering data or displaying dataand/or images and imager device 400 through bus 515 which may be one ormore busses or bridges linking the processor system components. A cameralens 535 allows an image or images of an object being viewed to pass tothe pixel array 118 (FIG. 1) of imager apparatus 440 when a “shutterrelease”/“record” button 540 is depressed.

The camera system 500 is only one example of a processing system havingdigital circuits that could include image sensor devices. Without beinglimiting, such a system could also include a computer system, cell phonesystem, scanner, machine vision system, vehicle navigation system, videophone, surveillance system, auto focus system, star tracker system,motion detection system, image stabilization system, and other imageprocessing systems.

While disclosed embodiments have been described in detail, it should bereadily understood that the invention is not limited to the disclosedembodiments. Rather the disclosed embodiments can be modified toincorporate any number of variations, alterations, substitutions orequivalent arrangements not heretofore described.

1. An interconnect for a semiconductor structure, the interconnectcomprising: a first conductive structure; a second conductive structure;and a liquid conductive material in contact with the first and secondstructure, the liquid conductive material remaining a liquid duringmanufacture of the semiconductor device.
 2. The interconnect of claim 1,wherein the liquid conductive material is an epoxy comprising aconductive filler.
 3. The interconnect of claim 2, wherein the epoxyfurther comprises an electrolyte.
 4. The interconnect of claim 2,wherein the epoxy further comprises a thinner.
 5. The interconnect ofclaim 1, wherein the liquid conductive material is an electrolyte. 6.The interconnect of claim 5, wherein the electrolyte comprises apolymer.
 7. The interconnect of claim 5, wherein the electrolytecomprises polypropylene glycol and lithium based salts.
 8. Theinterconnect of claim 5, wherein the electrolyte comprises polyethyleneoxide and salts.
 9. The interconnect of claim 8, wherein the electrolytefurther comprises propylene glycol.
 10. The interconnect of claim 1,wherein the liquid conductive material has a viscosity of less thanabout 100,000 cps.
 11. A semiconductor structure comprising: a firstsubstrate comprising: at least one opening, and a first conductivecontact within the at least one opening; a second substrate comprising:at least one projection, at least one second conductive contactintegrated with the at least one projection; wherein the at least oneopening is in mating physical alignment with the at least oneprojection; and a liquid conductive material within the at least oneopening, the liquid conductive material remaining a liquid duringmanufacture of the semiconductor structure and providing an electricalconnection between the first conductive contact and the at least onesecond conductive contact.
 12. The semiconductor component of claim 11,wherein at least one of the first substrate and second substratecomprise active semiconductor devices.
 13. The semiconductor componentof claim 12, wherein the active semiconductor devices comprise an imagerdevice comprising a pixel array.
 14. The semiconductor component ofclaim 13, further comprising a third substrate, the third substratebeing at least partially transparent and comprising at least one lensfor focusing an image on the pixel array.
 15. The semiconductorcomponent of claim 14, wherein at least one of the first substrate andsecond substrate are moveable with respect to the third substrate duringoperation of the device.
 16. The semiconductor component of claim 11,wherein the first conductive contact and the at least one secondconductive contact form a through interconnect.
 17. The semiconductorcomponent of claim 11, wherein the at least one projection is a verticalpin.
 18. The semiconductor component of claim 11, wherein the firstsubstrate and second substrate are part of an electronic device andwherein the first substrate and second substrate are moveable withrespect to one another during operation of the device.
 19. Thesemiconductor component of claim 11, further comprising a device formoving at least one of the first substrate and second substrate.
 20. Thesemiconductor component of claim 19, wherein the device comprises a MEMSdevice.
 21. A method of forming a semiconductor component, the methodcomprising: providing a first substrate, the first substrate comprising:at least one opening, and a first conductive contact within the at leastone opening; at least partially filling the at least one opening with aliquid conductive material, the liquid conductive material remaining aliquid during the formation of the semiconductor component; and engagingthe first substrate with a second substrate, the second substratecomprising: at least one projection extending into the opening of thefirst substrate, and, at least one second conductive contact provided onthe at least one projection engaging with the liquid conductivematerial.
 22. The method of claim 21, further comprising: aligning thefirst substrate and second substrate such that the at least one openingis aligned with the at least one projection; and placing the at leastone opening is in mating physical engagement with the at least oneprojection such that the liquid conductive material is in contact withthe first conductive contact and the at least one second conductivecontact.
 23. The method of claim 21, further comprising subsequent tothe act of placing, moving at least one of the first substrate andsecond substrate with respect to the other.
 24. The method of claim 23,wherein the act of moving comprises moving the first substrate away fromor toward the second substrate.
 25. The method of claim 23, wherein theact of moving comprises operating a movement device to move at least oneof the first substrate and second substrate with respect to the other.26. The method of claim 23, further comprising providing at least onelens, wherein the first substrate further comprises a pixel array andwherein the act of moving comprises moving the first substrate withrespect to the at least one lens.
 27. An imager device comprising: asemiconductor structure comprising: a first substrate comprising a pixelarray, a second substrate electrically connected to the first substrateby a liquid conductive material; at least one lens for focusing an imageon the pixel array.
 28. The imager device of claim 27, wherein thedevice for moving at least the first substrate is located on one of thefirst substrate and second substrate.
 29. The imager device of claim 27,further comprising a third substrate, wherein the at least one lens islocated on the third substrate.
 30. The imager device of claim 27,wherein the first substrate further comprises: at least one opening, anda first conductive contact within the at least one opening;
 31. Theimager device of claim 30, wherein the non-hardening liquid conductivematerial is within the at least one opening.
 32. The imager device ofclaim 31, wherein the second substrate comprises: at least oneprojection extending into the opening of the first substrate, and, atleast one second conductive contact provided on the at least oneprojection and engaging with the non-hardening liquid conductivematerial.
 33. A method of focusing an image on a pixel array of animager device, the method comprising: providing a semiconductorstructure comprising: first substrate comprising a pixel array, a secondsubstrate electrically connected to the first substrate by a liquidconductive material to allow relative movement between the firstsubstrate and second substrate; arranging at least one lens to focus animage on the pixel array; and operating a device to move the firstsubstrate relative to the at least one lens.
 34. The method of claim 33,wherein the moving the at least one first substrate comprises moving thefirst substrate during operation of the imager device.